Electronic Devices ENSC 224 (3)
The essential physics of silicon semiconductor devices that form the heart of integrated circuits today. An introduction to semiconductor device physics upon which device models are based leading to the development of the drift-diffusion equations. The static and dynamic behavior of PN junction diodes, bipolar junction transistors, and field effect transistors will be covered along with the application of the developed device models to integrated circuit design. Prerequisite: ENSC 220, MATH 232, and MATH 310 or equivalents. Students who have credit for PHYS 365 cannot take this course for further credit.