Electronic Devices ENSC 324 (3)
The essential physics of silicon semiconductor devices that form the heart of integrated circuits today. An introduction to semiconductor device physics upon which device models are based leading to the development of the drift-diffusion equations. The static and dynamic behavior of PN junction diodes, bipolar junction transistors, and field effect transistors will be covered along with the application of the developed device models to integrated circuit design. Prerequisite: (ENSC 220 or MSE 250), MATH 232, and MATH 310. Students who have taken ENSC 224 cannot take this course for further credit.
| Section | Instructor | Day/Time | Location |
|---|---|---|---|
|
Bonnie Gray |
Sep 8 – Dec 7, 2015: Mon, 2:30–4:20 p.m.
Sep 8 – Dec 7, 2015: Wed, 2:30–3:20 p.m. |
Burnaby Burnaby |
|
| D101 |
Bonnie Gray |
Sep 8 – Dec 7, 2015: Wed, 3:30–4:20 p.m.
|
Burnaby |
| LA01 |
Bonnie Gray |
TBD |